Invention Grant
- Patent Title: High strength through-substrate vias
- Patent Title (中): 高强度通衬底通孔
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Application No.: US13293698Application Date: 2011-11-10
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Publication No.: US08785790B2Publication Date: 2014-07-22
- Inventor: Cyprian Emeka Uzoh , Charles G. Woychik , Terrence Caskey , Belgacem Haba , Hiroaki Sato , Philip Damberg
- Applicant: Cyprian Emeka Uzoh , Charles G. Woychik , Terrence Caskey , Belgacem Haba , Hiroaki Sato , Philip Damberg
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H05K1/11
- IPC: H05K1/11 ; H01K3/10

Abstract:
A component includes a support structure having first and second spaced-apart and parallel surfaces and a plurality of conductive elements extending in a direction between the first and second surfaces. Each conductive element contains an alloy of a wiring metal selected from the group consisting of copper, aluminum, nickel and chromium, and an additive selected from the group consisting of Gallium, Germanium, Indium, Selenium, Tin, Sulfur, Silver, Phosphorus, and Bismuth. The alloy has a composition that varies with distance in at least one direction across the conductive element. A concentration of the additive is less than or equal to 5% of the total atomic mass of the conductive element, and a resistivity of the conductive element is between 2.5 and 30 micro-ohm-centimeter.
Public/Granted literature
- US20130118784A1 HIGH STRENGTH THROUGH-SUBSTRATE VIAS Public/Granted day:2013-05-16
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