发明授权
- 专利标题: Thin film transistor, display device including the same, and method of manufacturing the display device
- 专利标题(中): 薄膜晶体管,包括其的显示装置及其制造方法
-
申请号: US12926665申请日: 2010-12-02
-
公开(公告)号: US08785910B2公开(公告)日: 2014-07-22
- 发明人: Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
- 申请人: Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
- 申请人地址: KR Yongin, Gyeonggi-Do
- 专利权人: Samsung Display Co., Ltd.
- 当前专利权人: Samsung Display Co., Ltd.
- 当前专利权人地址: KR Yongin, Gyeonggi-Do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2009-0119984 20091204
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; H01L29/10 ; H01L21/84 ; H01L21/00 ; H01L31/00
摘要:
A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å.
公开/授权文献
信息查询
IPC分类: