摘要:
A bed covering apparatus that prevents bed bugs from intrusion to an enclosed sleeping area, wherein the bed covering apparatus has a net for exclusion of insects and an openable section disposed at one end of the net that is dimensioned to accommodate legs of a person sleeping within the net, and also contains at least one slippery section to which bed bugs cannot adhere, thereby causing the bed bugs to fall from the netted sleeping area before they have an opportunity to enter the sleeping enclosure. The bed covering apparatus further may comprise straps to securely attach it to a mattress.
摘要:
A bed covering apparatus that prevents bed bugs from intrusion to an enclosed sleeping area, wherein the bed covering apparatus has a net for exclusion of insects, and also contains at least one slippery section to which bed bugs cannot adhere, thereby causing the bed bugs to fall from the netted sleeping area before they have an opportunity to enter the sleeping enclosure.
摘要:
A method for fabricating a T-shaped gate electrode of a high speed semiconductor device such as HEMTs which is applied to high speed logic circuit including low-noise receivers and power amplifiers having a frequency of X-band or more respectively, and MMICs having a frequency of millimeter wave band. Such devices require a short gate length and a large sectional area of the gate pattern. The conventional photolithography techniques are in need of the resolution for fabricating a fine line width. Therefore, electron-beam lithography is most widely used. But, it is difficult to enhance throughput in manufacturing semiconductor devices because a lot of exposure time is required in the methods using electron beams. In the present invention, a silicon oxide film or a silicon nitride film is deposited on a mono-layered resist pattern. A dummy pattern corresponding to a leg of the gate is formed using the silicon oxide film or the silicon nitride film. A leg of the gate electrode is formed at the portion of the dummy pattern. According to the present invention, a step for improving the resolution is not required, and a gate electrode having a very fine line width of a few hundreds .ANG. can be obtained by regulating the thickness of the silicon nitride film.
摘要:
The invention relates to a method of fabricating a compound semiconductor device by forming a first and a second compound semiconductor devices having a plurality of different epitaxial layers on a common semiconductor substrate. The method comprises the steps of sequentially forming a plurality of first epitaxial layers for manufacturing the first compound semiconductor device on the semiconductor substrate; forming a first insulating film pattern for defining an active region of the first compound semiconductor device; etching the plurality of first epitaxial layers using the first insulating film pattern as a mask; forming a second insulating film on the resultant structure; forming a sidewall insulating spacer on the sidewall of the active region of the first compound semiconductor device by dry etching the second insulating film; sequentially forming a plurality of second epitaxial layers for manufacturing the second compound semiconductor device on the portion from which the plurality of first epitaxial layers is etched back; forming each electrode of the first and second compound semiconductor devices; and forming an interconnection electrode interconnecting each electrode of the first and second compound semiconductor devices.
摘要:
A method for fabricating a T-shaped gate electrode includes the steps of: forming a fine gate pattern on a semiconductor substrate; forming an insulating layer on the semiconductor substrate on which the gate pattern is formed, and forming a planarizing layer on the insulating layer to planarize the surface of the semiconductor substrate; etching the planarizing layer to expose the top of the insulating layer; isotropically etching the insulating layer to expose the gate pattern using the planarizing layer as a mask; etching the exposed gate pattern to selectively expose the semiconductor substrate; depositing a gate metal to cover the exposed substrate, the insulating layer and the planarizing layer, to form a T-shaped gate; and simultaneously removing the planarizing layer, thereby forming a T-shaped gate metal with improved productivity.
摘要:
A benign prostatic hyperplasia treatment device. The benign prostatic hyperplasia treatment device includes: an anchor assembly including a pair of first and second anchors arranged at upper and lower portions of the outer surface of the prostate gland, and a ligature connecting the first and second anchors with each other so that the first and second anchors continuously compress the prostatic tissues to secure the opening of the prostatic urethra; a sheath inserted into the urethra and having a needle, which guides the anchor assembly to be deployed at the prostate gland; a needle manipulation part for manipulating movement of the needle so that the needle is deployed through an end portion of the sheath.
摘要:
Splice variants associated with neomorphic SF3B1 mutations are described herein. This application also relates to methods of detecting the described splice variants, and uses for diagnosing cancer, evaluating modulators of SF3B1, and methods of treating cancer associated with mutations in SF3B1.
摘要:
A fish trap includes: a fish trap mesh formed with at least one entrance; at least one frame supporting the fish trap mesh; at least one luring part formed to extend from the entrance of the fish trap mesh in a direction toward the inside of the frame and including a lure opening; and an escape prevention part forming an isolated space and provided with at least one fish passage hole through which fish passes after passing through the luring opening of the at least one luring part.
摘要:
The present invention relates to a high-speed screening apparatus for a Raman analysis-based high-speed multiple drug. The screening apparatus according to the present invention may easily detect a Raman signal using a core-cap-shell nanoparticle which amplifies the Raman signal by 1012 times and has high reproducibility through Raman spectroscopy in which materials do not interfere with each other and a spectrum has a sharp peak to detect the Raman signal multiple times. Also, since a CCD camera, not a scanner, may be used as the detector, the screening apparatus may multiply screen the drug at a high speed without movement between molecules within a sample. In addition, since multicolors of 5 colors or more may be coated, the screening apparatus may be usefully used for screening various drugs.
摘要:
In accordance with the present invention, there is provided multiple embodiments of a concentrated photovoltaic (CPV) module or package. In each embodiment of the present invention, the CPV module includes a mounting device or holder for use in maintaining an optical member or optical light guide of the module in a prescribed position relative to the solar cell or receiver die thereof.