Invention Grant
- Patent Title: High electron mobility transistor
- Patent Title (中): 高电子迁移率晶体管
-
Application No.: US13707162Application Date: 2012-12-06
-
Publication No.: US08785944B2Publication Date: 2014-07-22
- Inventor: In-jun Hwang , Jae-joon Oh , Jae-won Lee , Hyo-ji Choi , Jong-bong Ha
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0130480 20111207; KR10-2012-0057472 20120530
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/423 ; H01L29/43
Abstract:
A high electron mobility transistor (HEMT) according to example embodiments includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a reverse diode gate structure on the second semiconductor layer. A source and a drain may be on at least one of the first semiconductor layer and the second semiconductor layer. A gate electrode may be on the reverse diode gate structure.
Public/Granted literature
- US20130146890A1 HIGH ELECTRON MOBILITY TRANSISTOR Public/Granted day:2013-06-13
Information query
IPC分类:
