发明授权
- 专利标题： GAN vertical superjunction device structures and fabrication methods
- 专利标题（中）： GAN垂直超结装置结构及制造方法
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申请号： US13529822申请日： 2012-06-21
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公开(公告)号： US08785975B2公开(公告)日： 2014-07-22
- 发明人: Hui Nie , Andrew P. Edwards , Donald R. Disney , Isik C. Kizilyalli
- 申请人： Hui Nie , Andrew P. Edwards , Donald R. Disney , Isik C. Kizilyalli
- 申请人地址： US CA Santa Clara
- 专利权人： Avogy, Inc.
- 当前专利权人： Avogy, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L29/778 ; H01L29/06
摘要：
A semiconductor device includes a III-nitride substrate of a first conductivity type, a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, and a first III-nitride epitaxial structure coupled to a first portion of a surface of the first III-nitride epitaxial layer. The first III-nitride epitaxial structure has a sidewall. The semiconductor device further includes a second III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial structure, a second III-nitride epitaxial layer of the first conductivity type coupled to the sidewall of the second III-nitride epitaxial layer and a second portion of the surface of the first III-nitride epitaxial layer, and a third III-nitride epitaxial layer of a second conductivity type coupled to the second III-nitride epitaxial layer. The semiconductor device also includes one or more dielectric structures coupled to a surface of the third III-nitride epitaxial layer.
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