发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13151306申请日: 2011-06-02
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公开(公告)号: US08786002B2公开(公告)日: 2014-07-22
- 发明人: Masao Kondo , Masatoshi Morikawa , Satoshi Goto
- 申请人: Masao Kondo , Masatoshi Morikawa , Satoshi Goto
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Mattingly & Malur, PC
- 优先权: JP2010-147714 20100629
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L29/94
摘要:
In terms of achieving a reduction in the cost of an antenna switch, there is provided a technology capable of minimizing harmonic distortion generated in the antenna switch even when the antenna switch is particularly formed of field effect transistors formed over a silicon substrate. Between the source region and the drain region of each of a plurality of MISFETs coupled in series, a distortion compensating capacitance circuit is coupled which has a voltage dependency such that, in either of the cases where a positive voltage is applied to the drain region based on the potential of the source region and where a negative voltage is applied to the drain region based on the potential of the source region, the capacitance decreases to a value smaller than that in a state where the potential of the source region and the potential of the drain region are at the same level.
公开/授权文献
- US20110316062A1 SEMICONDUCTOR DEVICE 公开/授权日:2011-12-29
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