Invention Grant
US08786110B2 Semiconductor device and manufacturing method thereof 有权
半导体装置及其制造方法

Semiconductor device and manufacturing method thereof
Abstract:
A semiconductor device comprising a support plate, a semiconductor element mounted on the support plate and including a circuit element surface having a plurality of first electrodes, a first insulation layer covering the circuit element surface of the semiconductor element, and including a plurality of first apertures exposing the plurality of first electrodes, a second insulation layer covering an upper part of the support plate and side parts of the semiconductor element, and wirings formed on an upper part of the first insulation layer and on an upper part of the second insulation layer, and electrically connected to the corresponding first electrodes.
Public/Granted literature
Information query
Patent Agency Ranking
0/0