Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13075921Application Date: 2011-03-30
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Publication No.: US08786110B2Publication Date: 2014-07-22
- Inventor: Hisakazu Marutani , Yasunari Iwami , Tomoshige Chikai , Tomoko Takahashi , Osamu Yamagata , Shingo Mitsugi , Chunghao Chen
- Applicant: Hisakazu Marutani , Yasunari Iwami , Tomoshige Chikai , Tomoko Takahashi , Osamu Yamagata , Shingo Mitsugi , Chunghao Chen
- Applicant Address: JP Usuki
- Assignee: J-Devices Corporation
- Current Assignee: J-Devices Corporation
- Current Assignee Address: JP Usuki
- Agency: Staas and Halsey LLP
- Priority: JP2010-214306 20100924
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/02

Abstract:
A semiconductor device comprising a support plate, a semiconductor element mounted on the support plate and including a circuit element surface having a plurality of first electrodes, a first insulation layer covering the circuit element surface of the semiconductor element, and including a plurality of first apertures exposing the plurality of first electrodes, a second insulation layer covering an upper part of the support plate and side parts of the semiconductor element, and wirings formed on an upper part of the first insulation layer and on an upper part of the second insulation layer, and electrically connected to the corresponding first electrodes.
Public/Granted literature
- US20120074594A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-03-29
Information query
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