Invention Grant
- Patent Title: Low-power, high-voltage integrated circuits
- Patent Title (中): 低功耗,高压集成电路
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Application No.: US13721926Application Date: 2012-12-20
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Publication No.: US08786354B2Publication Date: 2014-07-22
- Inventor: Mario Motz
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: SpryIP, LLC
- Main IPC: G05F3/02
- IPC: G05F3/02

Abstract:
Embodiments relate to integrated circuits with protection. In one embodiment the protection is coupled between a first circuit provided to control a low power mode of the integrated circuit and a supply voltage. The protection comprises in an embodiment a transistor being one of a depletion transistor or a junction field effect transistor.
Public/Granted literature
- US20140002181A1 LOW-POWER, HIGH-VOLTAGE INTEGRATED CIRCUITS Public/Granted day:2014-01-02
Information query
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