发明授权
- 专利标题： Workfunction metal stacks for a final metal gate
- 专利标题（中）： 用于最终金属门的功能金属堆叠
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申请号： US13445475申请日： 2012-04-12
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公开(公告)号： US08790973B2公开(公告)日： 2014-07-29
- 发明人: Thilo Scheiper , Jan Hoentschel
- 申请人： Thilo Scheiper , Jan Hoentschel
- 申请人地址： KY Grand Cayman
- 专利权人： GlobalFoundries Inc.
- 当前专利权人： GlobalFoundries Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Ditthavong & Steiner, P.C.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
Transistor devices are formed with a pMOS and an nMOS workfunction stack of substantially equal thickness after gate patterning. Embodiments include forming n-type and p-type areas in a substrate, forming a pMOS workfunction metal stack layer on both areas, forming a hardmask layer on the pMOS workfunction metal stack layer on the n-type area, removing the pMOS workfunction metal stack layer from the p-type area, forming an nMOS workfunction metal stack layer on the p-type area and on the hardmask layer, and removing the nMOS workfunction metal stack layer from the hardmask layer.
公开/授权文献
- US20130270645A1 WORKFUNCTION METAL STACKS FOR A FINAL METAL GATE 公开/授权日：2013-10-17
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