发明授权
US08791001B2 N2 based plasma treatment and ash for HK metal gate protection
有权
基于N2的等离子体处理和灰渣用于HK金属栅极保护
- 专利标题： N2 based plasma treatment and ash for HK metal gate protection
- 专利标题（中）： 基于N2的等离子体处理和灰渣用于HK金属栅极保护
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申请号： US12400395申请日： 2009-03-09
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公开(公告)号： US08791001B2公开(公告)日： 2014-07-29
- 发明人: Yu Chao Lin , Ryan Chia-Jen Chen , Yih-Ann Lin , Jr Jung Lin
- 申请人： Yu Chao Lin , Ryan Chia-Jen Chen , Yih-Ann Lin , Jr Jung Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/335
- IPC分类号： H01L21/335 ; H01L21/283
摘要：
The present disclosure provides a method for making a semiconductor device. The method includes forming a first material layer on substrate; forming a patterned photoresist layer on the first material layer; applying an etching process to the first material layer using the patterned photoresist layer as a mask; and applying a nitrogen-containing plasma to the substrate to remove the patterned photoresist layer.
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