Disclosed herein are through silicon vias (TSVs) and contacts formed on a semiconductor material, methods of manufacturing, and design structures. The method includes forming a contact hole in a dielectric material formed on a substrate. The method further includes forming a via in the substrate and through the dielectric material. The method further includes lining the contact hole and the dielectric material with a metal liner using a deposition technique that will avoid formation of the liner in the via formed in the substrate. The method further includes filling the contact hole and the via with a metal such that the metal is formed on the liner in the contact hole and directly on the substrate in the via.