Invention Grant
US08791032B2 Method of manufacturing thin film transistor, thin film transistor manufactured by using the method, method of manufacturing organic light-emitting display apparatus, and organic light-emitting display apparatus manufactured by using the method
有权
制造薄膜晶体管的方法，使用该方法制造的薄膜晶体管，制造有机发光显示装置的方法和使用该方法制造的有机发光显示装置
- Patent Title: Method of manufacturing thin film transistor, thin film transistor manufactured by using the method, method of manufacturing organic light-emitting display apparatus, and organic light-emitting display apparatus manufactured by using the method
- Patent Title (中): 制造薄膜晶体管的方法，使用该方法制造的薄膜晶体管，制造有机发光显示装置的方法和使用该方法制造的有机发光显示装置
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Application No.: US13200383Application Date: 2011-09-23
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Publication No.: US08791032B2Publication Date: 2014-07-29
- Inventor: Byoung-Keon Park , Jong-Ryuk Park , Dong-Hyun Lee , Jin-Wook Seo , Ki-Yong Lee
- Applicant: Byoung-Keon Park , Jong-Ryuk Park , Dong-Hyun Lee , Jin-Wook Seo , Ki-Yong Lee
- Applicant Address: KR Giheung-Gu, Yongin, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Giheung-Gu, Yongin, Gyeonggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2011-0057005 20110613
- Main IPC: H01L29/18
- IPC: H01L29/18
Abstract:
A method of manufacturing a thin film transistor (TFT), a TFT manufactured by the method, a method of manufacturing an organic light-emitting display apparatus that includes the TFT, a display including the TFT. By including a buffer layer below and an insulating layer above a silicon layer for the TFT, the silicon layer can be crystallized without being exposed to air, so that contamination can be prevented. Also, due to the overlying insulating layer, the silicon layer can be patterned without directly contacting photoresist. The result is a TFT with uniform and improved electrical characteristics, and an improved display apparatus.
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