发明授权
- 专利标题: Nonvolatile semiconductor memory device and method for manufacturing same
- 专利标题(中): 非易失性半导体存储器件及其制造方法
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申请号: US12820371申请日: 2010-06-22
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公开(公告)号: US08791464B2公开(公告)日: 2014-07-29
- 发明人: Tomoko Fujiwara , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
- 申请人: Tomoko Fujiwara , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2009-170455 20090721
- 主分类号: H01L29/792
- IPC分类号: H01L29/792
摘要:
According to one embodiment, a nonvolatile semiconductor memory device includes a stacked structure, a semiconductor pillar, a memory layer and an outer insulating film. The stacked structure includes a plurality of electrode films and a plurality of interelectrode insulating films alternately stacked in a first direction. The semiconductor pillar pierces the stacked structure in the first direction. The memory layer is provided between the electrode films and the semiconductor pillar. The outer insulating film is provided between the electrode films and the memory layer. The device includes a first region and a second region. An outer diameter of the outer insulating film along a second direction perpendicular to the first direction in the first region is larger than that in the second region. A thickness of the outer insulating film along the second direction in the first region is thicker than that in the second region.