Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13052152Application Date: 2011-03-21
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Publication No.: US08791517B2Publication Date: 2014-07-29
- Inventor: Hiroyuki Kutsukake , Yoshiko Kato , Yoshihisa Watanabe , Koichi Fukuda , Kazunori Masuda
- Applicant: Hiroyuki Kutsukake , Yoshiko Kato , Yoshihisa Watanabe , Koichi Fukuda , Kazunori Masuda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-175693 20100804
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/92
Abstract:
According to one embodiment, a semiconductor device includes at least one semiconductor region provided in a semiconductor substrate, and a capacitor group including a plurality of capacitors provided in the semiconductor region, each capacitor including a capacitor insulating film provided on the semiconductor region, a capacitor electrode provided on the capacitor insulating film, and at least one diffusion layer provided in the semiconductor region adjacent to the capacitor electrode.
Public/Granted literature
- US20120032243A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-02-09
Information query
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