Invention Grant
- Patent Title: Composite reconstituted wafer structures
- Patent Title (中): 复合复晶晶片结构
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Application No.: US13631855Application Date: 2012-09-28
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Publication No.: US08791543B2Publication Date: 2014-07-29
- Inventor: Vlad Lenive , Simon Stacey
- Applicant: Cambridge Silicon Radio Limited
- Applicant Address: GB Cambridge
- Assignee: Cambridge Silicon Radio Limited
- Current Assignee: Cambridge Silicon Radio Limited
- Current Assignee Address: GB Cambridge
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Priority: GB1217033.8 20120925
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A reconstituted electronic device comprising at least one die and at least one passive component. A functional material is incorporated in the substrate of the device to modify the electrical behavior of the passive component. The passive component may be formed in redistribution layers of the device. Composite functional materials may be used in the substrate to forms part of or all of the passive component. A metal carrier may form part of the substrate and part of the at least one passive component.
Public/Granted literature
- US20140084391A1 Composite Reconstituted Wafer Structures Public/Granted day:2014-03-27
Information query
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