- 专利标题: Current sensor, inverter circuit, and semiconductor device having the same
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申请号: US13150764申请日: 2011-06-01
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公开(公告)号: US08791690B2公开(公告)日: 2014-07-29
- 发明人: Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
- 申请人: Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
- 申请人地址: JP Kariya
- 专利权人: DENSO CORPORATION
- 当前专利权人: DENSO CORPORATION
- 当前专利权人地址: JP Kariya
- 代理机构: Posz Law Group, PLC
- 优先权: JP2010-129319 20100604; JP2011-15345 20110127; JP2011-27411 20110210
- 主分类号: G01R1/20
- IPC分类号: G01R1/20
摘要:
A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.
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