Invention Grant
- Patent Title: Multi-level memory cell read, program, and erase techniques
- Patent Title (中): 多级存储单元读,编程和擦除技术
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Application No.: US13590230Application Date: 2012-08-21
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Publication No.: US08792274B1Publication Date: 2014-07-29
- Inventor: Qiang Tang , Bo Wang , Chih-Hsin Wang
- Applicant: Qiang Tang , Bo Wang , Chih-Hsin Wang
- Applicant Address: BM Hamilton
- Assignee: Marvell International Ltd.
- Current Assignee: Marvell International Ltd.
- Current Assignee Address: BM Hamilton
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C7/06

Abstract:
A system is provided and includes an array of cells, a first module, and a third module. The first module reads a state of a cell in the array to detect first bits stored in the cell. The third module, subsequent to the first module reading the state, performs a first operation on a first bit of the first bits and performs the first operation on a first of multiple signal inputs. The signal inputs indicate second bits of data to be stored in the cell. The third module performs a second operation on a second bit of the first bits and performs the second operation on a second one of the signal inputs. The first module, based on results of the first and second operations, performs a first erase operation or a first program operation on the cell to match the state of the cell to the second bits.
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