Invention Grant
US08792282B2 Nonvolatile memory devices, memory systems and computing systems
有权
非易失性存储器件，存储器系统和计算系统
- Patent Title: Nonvolatile memory devices, memory systems and computing systems
- Patent Title (中): 非易失性存储器件，存储器系统和计算系统
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Application No.: US13545588Application Date: 2012-07-10
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Publication No.: US08792282B2Publication Date: 2014-07-29
- Inventor: Ho-Chul Lee , Doogon Kim , Jinman Han
- Applicant: Ho-Chul Lee , Doogon Kim , Jinman Han
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0019532 20100304; KR10-2011-0068826 20110712
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/16 ; G11C16/14 ; G11C16/04
Abstract:
A nonvolatile memory device configured to apply a wordline erase voltage to a plurality of wordlines connected to a plurality of memory cells, apply an erase voltage to a substrate where a memory cell string is formed while applying a specific voltage to at least one ground selection line connected to at least one ground selection transistor, and float the at least one ground selection line when a target voltage of the substrate reaches a target voltage.
Public/Granted literature
- US20120275234A1 NONVOLATILE MEMORY DEVICES, MEMORY SYSTEMS AND COMPUTING SYSTEMS Public/Granted day:2012-11-01
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