Invention Grant
US08795955B2 Naphthalene derivative, resist bottom layer material, resist bottom layer forming method, and patterning process
有权
萘衍生物，抗蚀剂底层材料，抗蚀剂底层形成方法和图案化工艺
- Patent Title: Naphthalene derivative, resist bottom layer material, resist bottom layer forming method, and patterning process
- Patent Title (中): 萘衍生物，抗蚀剂底层材料，抗蚀剂底层形成方法和图案化工艺
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Application No.: US13165536Application Date: 2011-06-21
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Publication No.: US08795955B2Publication Date: 2014-08-05
- Inventor: Takeshi Kinsho , Katsuya Takemura , Daisuke Kori , Takeru Watanabe , Tsutomu Ogihara
- Applicant: Takeshi Kinsho , Katsuya Takemura , Daisuke Kori , Takeru Watanabe , Tsutomu Ogihara
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2010-140533 20100621
- Main IPC: G03F7/20
- IPC: G03F7/20 ; C07D311/78 ; B05D3/12 ; C08G65/00 ; B05D3/10 ; C07C43/20 ; C07D307/77 ; C07C43/275 ; C09D201/06
Abstract:
A naphthalene derivative having formula (1) is provided wherein cyclic structures Ar1 and Ar2 denote a benzene or naphthalene ring, X is a single bond or C1-C20 alkylene, m is 0 or 1, and n is such a natural number as to provide a molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.
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