发明授权
US08795955B2 Naphthalene derivative, resist bottom layer material, resist bottom layer forming method, and patterning process
有权
萘衍生物，抗蚀剂底层材料，抗蚀剂底层形成方法和图案化工艺
- 专利标题： Naphthalene derivative, resist bottom layer material, resist bottom layer forming method, and patterning process
- 专利标题（中）： 萘衍生物，抗蚀剂底层材料，抗蚀剂底层形成方法和图案化工艺
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申请号： US13165536申请日： 2011-06-21
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公开(公告)号： US08795955B2公开(公告)日： 2014-08-05
- 发明人: Takeshi Kinsho , Katsuya Takemura , Daisuke Kori , Takeru Watanabe , Tsutomu Ogihara
- 申请人： Takeshi Kinsho , Katsuya Takemura , Daisuke Kori , Takeru Watanabe , Tsutomu Ogihara
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2010-140533 20100621
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; C07D311/78 ; B05D3/12 ; C08G65/00 ; B05D3/10 ; C07C43/20 ; C07D307/77 ; C07C43/275 ; C09D201/06
摘要：
A naphthalene derivative having formula (1) is provided wherein cyclic structures Ar1 and Ar2 denote a benzene or naphthalene ring, X is a single bond or C1-C20 alkylene, m is 0 or 1, and n is such a natural number as to provide a molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.
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