发明授权
- 专利标题: Grating-based evanescent field molecular sensor using a thin silicon waveguide layer
- 专利标题(中): 基于光栅的渐逝场分子传感器使用薄硅波导层
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申请号: US13129892申请日: 2009-12-02
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公开(公告)号: US08796012B2公开(公告)日: 2014-08-05
- 发明人: Bill Sinclair , Jens Schmid , Philip Waldron , Dan-Xia Xu , Adam Densmore , Trevor Mischki , Greg Lopinski , Jean Lapointe , Daniel Poitras , Siegfried Janz
- 申请人: Bill Sinclair , Jens Schmid , Philip Waldron , Dan-Xia Xu , Adam Densmore , Trevor Mischki , Greg Lopinski , Jean Lapointe , Daniel Poitras , Siegfried Janz
- 申请人地址: CA Ottawa
- 专利权人: National Research Council of Canada
- 当前专利权人: National Research Council of Canada
- 当前专利权人地址: CA Ottawa
- 代理商 Catherine Lemay
- 国际申请: PCT/CA2009/001764 WO 20091202
- 国际公布: WO2010/063116 WO 20100610
- 主分类号: C12M1/34
- IPC分类号: C12M1/34 ; G01N33/543 ; G01N33/551
摘要:
A technique for high sensitivity evanescent field molecular sensing employs a detection scheme that simultaneously couples a polarized beam to a single mode of a waveguide, and couples the polarized beam out of the waveguide to specularly reflect the beam by the same grating. Strong interaction with the single (preferably TM) mode is provided by using a silicon on insulator (SOI) wafer having a waveguide thickness chosen between 10-400 nm so that the majority of the mode field strength spans the evanescent field. Well known, robust techniques for producing a grating on the waveguide are provided. Interrogation from a backside of the SOI wafer is taught.
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