发明授权
US08796012B2 Grating-based evanescent field molecular sensor using a thin silicon waveguide layer 有权
基于光栅的渐逝场分子传感器使用薄硅波导层

Grating-based evanescent field molecular sensor using a thin silicon waveguide layer
摘要:
A technique for high sensitivity evanescent field molecular sensing employs a detection scheme that simultaneously couples a polarized beam to a single mode of a waveguide, and couples the polarized beam out of the waveguide to specularly reflect the beam by the same grating. Strong interaction with the single (preferably TM) mode is provided by using a silicon on insulator (SOI) wafer having a waveguide thickness chosen between 10-400 nm so that the majority of the mode field strength spans the evanescent field. Well known, robust techniques for producing a grating on the waveguide are provided. Interrogation from a backside of the SOI wafer is taught.
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