发明授权
- 专利标题： Memory device
- 专利标题（中）： 内存设备
-
申请号： US13590085申请日： 2012-08-20
-
公开(公告)号： US08796101B2公开(公告)日： 2014-08-05
- 发明人: Wolodymyr Czubatyj , Regino Sandoval
- 申请人： Wolodymyr Czubatyj , Regino Sandoval
- 申请人地址： US MI Sterling Heights
- 专利权人： Ovonyx, Inc.
- 当前专利权人： Ovonyx, Inc.
- 当前专利权人地址： US MI Sterling Heights
- 代理商 Kevin L. Bray
- 主分类号： H01L21/8239
- IPC分类号： H01L21/8239
摘要：
A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.
公开/授权文献
- US20120329237A1 Memory Device 公开/授权日：2012-12-27
信息查询
IPC分类:
