Invention Grant
- Patent Title: Integrated circuits with bi-directional charge pumps
- Patent Title (中): 具有双向电荷泵的集成电路
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Application No.: US13855006Application Date: 2013-04-02
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Publication No.: US08797091B2Publication Date: 2014-08-05
- Inventor: Yvonne Lin , Tien-Chun Yang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02

Abstract:
A method includes receiving a first voltage at a first input circuit of a bi-directional charge pump circuit, selectively turning on a first switch of a switching circuit that is coupled electrically to a deep N-well transistor of a first set of one or more intermediate pump stages that are coupled between the first input circuit and a first output circuit, and providing a third voltage from the first output circuit in response to receiving a second voltage at an input of a first diode of the output circuit from the first set of the one or more intermediate pump stages.
Public/Granted literature
- US20130214853A1 INTEGRATED CIRCUITS WITH BI-DIRECTIONAL CHARGE PUMPS Public/Granted day:2013-08-22
Information query
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