Invention Grant
US08798291B2 Structure of MEMS electroacoustic transducer and fabricating method thereof
有权
MEMS电声换能器的结构及其制造方法
- Patent Title: Structure of MEMS electroacoustic transducer and fabricating method thereof
- Patent Title (中): MEMS电声换能器的结构及其制造方法
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Application No.: US12233919Application Date: 2008-09-19
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Publication No.: US08798291B2Publication Date: 2014-08-05
- Inventor: Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang
- Applicant: Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H04R31/00
- IPC: H04R31/00
Abstract:
A structure of a micro-electro-mechanical systems (MEMS) electroacoustic transducer includes a substrate, a diaphragm, a silicon material layer, and a conductive pattern. The substrate includes an MEMS device region. The diaphragm has openings, and is disposed in the MEMS device region. A first cavity is formed between the diaphragm and the substrate. The silicon material layer is disposed on the diaphragm and seals the diaphragm. The conductive pattern is disposed beneath the diaphragm in the MEMS device region.
Public/Granted literature
- US20100074458A1 STRUCTURE OF MEMS ELECTROACOUSTIC TRANSDUCER AND FABRICATING METHOD THEREOF Public/Granted day:2010-03-25
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