发明授权
- 专利标题： Solar cell and process for producing the same
- 专利标题（中）： 太阳能电池及其制造方法
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申请号： US12820892申请日： 2010-06-22
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公开(公告)号： US08802187B2公开(公告)日： 2014-08-12
- 发明人: Yoshiaki Ikenoue , Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki , Hitoshi Yokouchi , Ryoko Konta , Hiroaki Kaji
- 申请人： Yoshiaki Ikenoue , Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki , Hitoshi Yokouchi , Ryoko Konta , Hiroaki Kaji
- 申请人地址： JP Tokyo
- 专利权人： Showa Denko K.K.
- 当前专利权人： Showa Denko K.K.
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2007-038161 20070219
- 主分类号： H01L21/203
- IPC分类号： H01L21/203 ; H01L51/00
摘要：
The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.
公开/授权文献
- US20100261308A1 SOLAR CELL AND PROCESS FOR PRODUCING THE SAME 公开/授权日：2010-10-14
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