公开(公告)号：US08882971B2

公开(公告)日：2014-11-11

申请号：US12987828

申请日：2011-01-10

申请人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki

发明人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki

IPC分类号： C23C14/06 ,  C23C14/34 ,  H01L33/00 ,  C23C14/54

CPC分类号： C23C14/34 ,  C23C14/0647 ,  C23C14/541 ,  H01L33/007

摘要： A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.

摘要翻译： 溅射装置（1）包括：具有保持在减压状态的内部以产生等离子体放电（20）的室（10）; 放置在所述室（10）中并保持靶（21）的阴极（22）; 以及保持基板（110）的基板保持器（60），使得基板（110）的一个表面面向目标（21）的表面。 基板（110）布置在溅射装置（1）的上部，基板（110）的表面朝下。 目标（21）被布置在溅射装置（1）的下部，靶（21）的表面朝上。 溅射装置（1）包括用于加热基板（110）的加热器（65）。 通过吸收从加热器（65）辐射的电磁波来升高基板（110）的温度。 还公开了使用溅射装置制造半导体发光元件的方法。

公开(公告)号：US08557092B2

公开(公告)日：2013-10-15

申请号：US12374974

申请日：2007-10-19

申请人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki

发明人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki

IPC分类号： C23C14/56 ,  C23C14/06 ,  C23C14/34

CPC分类号： C23C14/3407 ,  C23C14/0617

摘要： A backing plate for use in a sputtering deposition apparatus being capable of stably holding Ga, and a sputtering deposition apparatus which is equipped with the backing plate are provided. Such a backing plate for use in a sputtering deposition apparatus is a backing plate for holding a target material which contains Ga, and at least a contact surface of which coming into contact with the target material is constituted from an easily wettable material having a contact angle to Ga in a liquid state of not more than 90°.

摘要翻译： 提供了能够稳定地保持Ga的溅射沉积设备中使用的背板和设置有背板的溅射沉积设备。 这种用于溅射沉积设备的背板是用于保持含有Ga的靶材料的背板，并且至少其与目标材料接触的接触表面由易接触的材料构成，该材料具有接触角 以Ga为液态不超过90°。

公开(公告)号：US08213118B2

公开(公告)日：2012-07-03

申请号：US12279214

申请日：2007-02-13

申请人： Masato Fukushima ,  Akira Sakawaki ,  Yasumasa Sasaki

发明人： Masato Fukushima ,  Akira Sakawaki ,  Yasumasa Sasaki

IPC分类号： G11B5/82

CPC分类号： G11B5/855 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/82 ,  G11B5/865

摘要： A discrete track-type magnetic recording medium (30) includes a nonmagnetic substrate (1), a magnetic recording track and a servo signal pattern which are provided on at least one side of the nonmagnetic substrate, and a nonmagnetic part (4) consisting of a nonmagnetic alloy containing Si for physically separating the magnetic recording track and the servo signal pattern. A magnetic recording and reproducing device comprising, in combination, the magnetic recording medium (30), a driving part (26) serving to drive the magnetic recording medium in a direction of recording, a magnetic head (27) composed of a recording part and a reproducing part, a device (28) to impart motion to the magnetic head relative to the magnetic recording medium, and a recording and reproducing signal processing device (29) for entering a signal into the magnetic head and reproducing an output signal from the magnetic head.

摘要翻译： 离散轨道型磁记录介质（30）包括设置在非磁性基板的至少一侧的非磁性基板（1），磁记录轨道和伺服信号图案，以及由非磁性基板构成的非磁性部分（4） 含有用于物理分离磁记录轨道和伺服信号模式的Si的非磁性合金。 一种磁记录和再现装置，包括磁记录介质（30），用于在记录方向上驱动磁记录介质的驱动部分（26），由记录部分组成的磁头（27）和 再现部分，用于相对于磁记录媒体向磁头施加运动的装置（28）;以及记录和再现信号处理装置（29），用于将信号输入磁头并再现来自磁性的输出信号 头。

公开(公告)号：US08097482B2

公开(公告)日：2012-01-17

申请号：US12438047

申请日：2008-06-03

申请人： Kenzo Hanawa ,  Yasumasa Sasaki ,  Hisayuki Miki

发明人： Kenzo Hanawa ,  Yasumasa Sasaki ,  Hisayuki Miki

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L21/02631 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/025 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering method, wherein the sputtering step includes respective substeps of: a film formation step for forming a semiconductor thin film while doping with Mg; and a plasma treatment step for applying an inert gas plasma treatment to the semiconductor thin film that has been formed in the film formation step, and the Group III nitride semiconductor is formed by laminating the semiconductor thin film through alternate repetitions of the film formation step and the plasma treatment step.

摘要翻译： 一种本发明的III族氮化物半导体的制造方法，其特征在于，包括：溅射工序，用于将基板和靶设置在室内，并通过反应溅射法在所述基板上形成掺杂了Mg的III族氮化物半导体， 步骤包括各自的子步骤：用于在掺杂Mg时形成半导体薄膜的成膜步骤; 以及等离子体处理步骤，用于对在成膜步骤中形成的半导体薄膜施加惰性气体等离子体处理，并且通过层合半导体薄膜而形成第III族氮化物半导体，该方法是通过交替重复成膜步骤和 等离子体处理步骤。

公开(公告)号：US20110198212A1

公开(公告)日：2011-08-18

申请号：US12987828

申请日：2011-01-10

申请人： Hisayuki MIKI ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki

发明人： Hisayuki MIKI ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki

IPC分类号： C23C14/34

CPC分类号： C23C14/34 ,  C23C14/0647 ,  C23C14/541 ,  H01L33/007

摘要： A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.

摘要翻译： 溅射装置（1）包括：具有保持在减压状态的内部以产生等离子体放电（20）的室（10）; 放置在所述室（10）中并保持靶（21）的阴极（22）; 以及保持基板（110）的基板保持器（60），使得基板（110）的一个表面面向目标（21）的表面。 基板（110）布置在溅射装置（1）的上部，基板（110）的表面朝下。 目标（21）被布置在溅射装置（1）的下部，靶（21）的表面朝上。 溅射装置（1）包括用于加热基板（110）的加热器（65）。 通过吸收从加热器（65）辐射的电磁波来升高基板（110）的温度。 还公开了使用溅射装置制造半导体发光元件的方法。

公开(公告)号：US20110147763A1

公开(公告)日：2011-06-23

申请号：US13057696

申请日：2009-07-30

申请人： Kenzo Hanawa ,  Yasumasa Sasaki

发明人： Kenzo Hanawa ,  Yasumasa Sasaki

IPC分类号： H01L33/32

CPC分类号： H01L21/0262 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/325 ,  H01S5/0213 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.

摘要翻译： 根据本发明，具有高结晶度的AlN晶体膜晶种层与选择性/横向生长结合，从而可以获得结晶度更高的III族氮化物半导体多层结构。 本发明的III族氮化物半导体多层结构体是III型氮化物半导体多层结构体，其中，在C面蓝宝石衬底表面上形成晶面间距为200nm以上的AlN结晶膜作为晶种层， 溅射方法和下层，分别由III族氮化物半导体构成的n型半导体层，发光层和p型半导体层进一步层叠，其中存在种子层的区域 并且不存在形成在C面蓝宝石衬底表面上和/或能够外延生长和不能外延生长的区域形成在下层中。

公开(公告)号：US20100165504A1

公开(公告)日：2010-07-01

申请号：US12600416

申请日：2008-06-17

申请人： Masato Fukushima ,  Akira Sakawaki ,  Yasumasa Sasaki

发明人： Masato Fukushima ,  Akira Sakawaki ,  Yasumasa Sasaki

IPC分类号： G11B21/02 ,  G11B5/84

CPC分类号： G11B5/855 ,  H01F41/34

摘要： The present invention aims to provide a method of producing a magnetic recording medium which is a method of producing a magnetic recording medium having a magnetically-separated magnetic recording pattern, the method including: forming a magnetic layer on a non-magnetic substrate; then exposing a surface of the magnetic layer partially to reactive plasma, or a reactive ion generated in the plasma to amorphize the portion of the magnetic layer.

摘要翻译： 本发明的目的是提供一种制造磁记录介质的方法，该方法是制造具有磁分离磁记录图形的磁记录介质的方法，该方法包括：在非磁性基板上形成磁性层; 然后将磁性层的表面部分地暴露于反应性等离子体，或者在等离子体中产生的反应性离子将非磁性化部分磁性层。

公开(公告)号：US20090323219A1

公开(公告)日：2009-12-31

申请号：US12278914

申请日：2007-02-06

申请人： Masato Fukushima ,  Akira Sakawaki ,  Yasumasa Sasaki

发明人： Masato Fukushima ,  Akira Sakawaki ,  Yasumasa Sasaki

IPC分类号： G11B5/187 ,  B05D5/12 ,  G11B5/00 ,  G11B5/65

CPC分类号： G11B5/855

摘要： A method for the production of a magnetic recording medium (30) includes the steps of depositing a magnetic layer or Co-containing magnetic layer (3) on at least one side of a nonmagnetic substrate (1) and partially implanting atoms into the magnetic layer or Co-containing magnetic layer to partially unmagnetize the magnetic layer or Co-containing magnetic layer, thereby forming nonmagnetic parts (4) and a magnetic recording pattern magnetically separated by the nonmagnetic parts and, in the case of the Co-containing magnetic layer, lowering Co (002) or Co (110) peak strength of a relevant part of the Co-containing magnetic layer as determined by the X-ray diffraction to ½ or less. A magnetic recording and reproducing device includes the magnetic recording medium (30), a driving part (26) for driving the magnetic recording medium in a direction of recording, a magnetic head (27) consisting of a recording part and a regenerating part, means (28) for moving the magnetic head relative to the magnetic recording medium, and recording and reproducing signal processing means (29) adapted to enter a signal into the magnetic head and regenerate an output signal from the magnetic head.

摘要翻译： 一种用于制造磁记录介质（30）的方法包括以下步骤：在非磁性基板（1）的至少一侧上沉积磁性层或含Co磁性层（3），并将原子部分地注入磁性层 或含Co磁性层，以使磁性层或含Co磁性层部分地不磁化，由此形成非磁性部分（4）和由非磁性部分磁分离的磁记录图案，并且在含Co磁性层的情况下， 将通过X射线衍射测定的含Co磁性层的有关部分的Co（002）或Co（110）峰强度降低至1/2以下。 一种磁记录和再现装置，包括磁记录介质（30），用于在记录方向上驱动磁记录介质的驱动部分（26），由记录部分和再生部分组成的磁头（27） （28），用于相对于磁记录介质移动磁头，以及记录和再现信号处理装置（29），其适于将信号输入到磁头中并再生来自磁头的输出信号。

公开(公告)号：US20090180213A1

公开(公告)日：2009-07-16

申请号：US12280073

申请日：2007-02-19

申请人： Masato Fukushima ,  Akira Sakawaki ,  Yasumasa Sasaki

发明人： Masato Fukushima ,  Akira Sakawaki ,  Yasumasa Sasaki

IPC分类号： G11B21/02 ,  G11B5/82 ,  C23C14/04

CPC分类号： G11B5/855 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/82 ,  G11B5/865

摘要： A discrete track-type magnetic recording medium (30) includes a nonmagnetic substrate (1), a magnetic recording track and a servo signal pattern that are provided on at least one side of the nonmagnetic substrate and a part (4) nonmagnetized through implantation (7) of ions from above a mask (6) having a shape of a pattern expected to be separated for physically separating the magnetic recording track and the servo signal pattern. A magnetic recording and reproducing device includes the magnetic recording medium (30), a driving part (26) serving to drive the magnetic recording medium in a direction of recording, a magnetic head (27) composed of a recording part and a reproducing part, means (28) to impart motion to the magnetic head relative to the magnetic recording medium and recording and reproducing signal processing means (29) for entering a signal into the magnetic head and reproducing an output signal from the magnetic head.

摘要翻译： 离散轨道型磁记录介质（30）包括设置在非磁性基板的至少一侧的非磁性基板（1），磁记录轨道和伺服信号图案以及通过植入（非磁性基板）非磁性的部分（4） 7）离子，其具有预期要分离的图案的形状的掩模（6），用于物理分离磁记录轨道和伺服信号图案。 磁记录和再现装置包括磁记录介质（30），用于在记录方向上驱动磁记录介质的驱动部分（26），由记录部分和再现部分组成的磁头（27） 用于使磁头相对于磁记录介质运动的装置（28），以及用于将信号输入磁头并再现来自磁头的输出信号的信号处理装置（29）。

公开(公告)号：US20090146161A1

公开(公告)日：2009-06-11

申请号：US12300306

申请日：2007-05-08

申请人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

发明人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L33/00

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.

摘要翻译： 本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。 本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层包含具有确定的晶体界面的柱状晶体，并且柱状晶体密度为1×10 3〜1×10 5个晶体/ m 2。