发明授权
- 专利标题： Heterojunction III-V photovoltaic cell fabrication
- 专利标题（中）： 异质结III-V光伏电池制造
-
申请号： US12713584申请日： 2010-02-26
-
公开(公告)号： US08802477B2公开(公告)日： 2014-08-12
- 发明人: Stephen W. Bedell , Norma Sosa Cortes , Keith E. Fogel , Devendra Sadana , Ghavam Shahidi , Davood Shahrjerdi
- 申请人： Stephen W. Bedell , Norma Sosa Cortes , Keith E. Fogel , Devendra Sadana , Ghavam Shahidi , Davood Shahrjerdi
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/30 ; H01L21/46 ; H01L21/762 ; H01L21/20 ; H01L31/0304
摘要：
A method for forming a heterojunction III-V photovoltaic (PV) cell includes performing layer transfer of a base layer from a wafer of a III-V substrate, the base layer being less than about 20 microns thick; forming an intrinsic layer on the base layer; forming an amorphous silicon layer on the intrinsic layer; and forming a transparent conducting oxide layer on the amorphous silicon layer. A heterojunction III-V photovoltaic (PV) cell includes a base layer comprising a III-V substrate, the base layer being less than about 20 microns thick; an intrinsic layer located on the base layer; an amorphous silicon layer located on the intrinsic layer; and a transparent conducting oxide layer located on the amorphous silicon layer.
公开/授权文献
- US20100307572A1 Heterojunction III-V Photovoltaic Cell Fabrication 公开/授权日：2010-12-09
信息查询
IPC分类:
