发明授权
- 专利标题： Surface repair structure and process for interconnect applications
- 专利标题（中）： 互连应用的表面修复结构和过程
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申请号： US13603051申请日： 2012-09-04
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公开(公告)号： US08802563B2公开(公告)日： 2014-08-12
- 发明人: Chih-Chao Yang , Conal E. Murray
- 申请人： Chih-Chao Yang , Conal E. Murray
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method is provided which includes providing a dielectric material having a dielectric constant of about 4.0 or less and at least one conductive material embedded therein, the at least one conductive material has an upper surface that is coplanar with an upper surface of the dielectric material and the upper surface of the at least one conductive material has hollow-metal related defects that extend inward into the at least one conductive material; and filling the hollow-metal related defects with a surface repair material.
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