发明授权
- 专利标题： Body contacts for FET in SOI SRAM array
- 专利标题（中）： SOI SRAM阵列中FET的体接触
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申请号： US13618240申请日： 2012-09-14
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公开(公告)号： US08809187B2公开(公告)日： 2014-08-19
- 发明人: Yue Tan , Zhibin Ren , Richard A. Wachnik , Haining S. Yang
- 申请人： Yue Tan , Zhibin Ren , Richard A. Wachnik , Haining S. Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Joseph P. Abate; Howard M. Cohn
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Contact with a floating body of an FET in SOI may be formed in a portion of one of the two diffusions of the FET, wherein the portion of the diffusion (such as N−, for an NFET) which is “sacrificed” for making the contact is a portion of the diffusion which is not immediately adjacent (or under) the gate. This works well with linked body FETs, wherein the diffusion does not extend all the way to BOX, hence the linked body (such as P−) extends under the diffusion where the contact is being made. An example showing making contact for ground to two NFETs (PG and PD) of a 6T SRAM cell is shown.
公开/授权文献
- US20140027851A1 BODY CONTACTS FOR FET IN SOI SRAM ARRAY 公开/授权日：2014-01-30
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