发明授权
- 专利标题： Solid-state image sensing device and electronic apparatus
- 专利标题（中）： 固态摄像装置及电子装置
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申请号： US13592538申请日： 2012-08-23
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公开(公告)号： US08809922B2公开(公告)日： 2014-08-19
- 发明人: Hitoshi Moriya , Hiroaki Ishiwata , Kazuyoshi Yamashita , Hiroyuki Mori
- 申请人： Hitoshi Moriya , Hiroaki Ishiwata , Kazuyoshi Yamashita , Hiroyuki Mori
- 申请人地址： JP
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP
- 代理机构： Sheridan Ross P.C.
- 优先权： JP2011-188994 20110831
- 主分类号： H01L31/062
- IPC分类号： H01L31/062
摘要：
Disclosed is a solid-state image sensing device including: a first photoelectric conversion element having a first semiconductor region of a first conductivity type formed inside a semiconductor substrate; a second photoelectric conversion element having a second semiconductor region of a first conductivity type formed at a deeper position of the semiconductor substrate than the first photoelectric conversion element; a gate electrode laminated on the semiconductor substrate and to which a predetermined voltage is applied at a charge transfer time; a floating diffusion region to which the charges accumulated in the first photoelectric conversion element and the second photoelectric conversion element are transferred at the charge transfer time; and a third semiconductor region of a first conductivity type arranged between the first semiconductor region and the second semiconductor region in a depth direction of the semiconductor.
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