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US08809926B2 Semiconductor memory devices including vertical transistor structures 有权
包括垂直晶体管结构的半导体存储器件

Semiconductor memory devices including vertical transistor structures
摘要：
A semiconductor memory device may include a common source region on a substrate, an active pattern between the substrate and the common source region, a gate pattern facing a sidewall of the active pattern, a gate dielectric pattern between the gate pattern and the active pattern, a variable resistance pattern between the common source region and the active pattern, and an interconnection line.
摘要（中）：

半导体存储器件可以包括衬底上的公共源极区域，衬底和公共源极区域之间的有源图案，面对有源图案的侧壁的栅极图案，栅极图案和有源图案之间的栅极电介质图案， 公共源极区域和有源图案之间的可变电阻图案以及互连线。

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