发明授权
- 专利标题: Semiconductor component
- 专利标题(中): 半导体元件
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申请号: US12861153申请日: 2010-08-23
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公开(公告)号: US08809971B2公开(公告)日: 2014-08-19
- 发明人: Hans-Joachim Schulze , Frank Pfirsch
- 申请人: Hans-Joachim Schulze , Frank Pfirsch
- 申请人地址: AT Villach
- 专利权人: Infineon Technologies Austria AG
- 当前专利权人: Infineon Technologies Austria AG
- 当前专利权人地址: AT Villach
- 代理机构: Murphy, Bilak & Homiller, PLLC
- 优先权: DE102009038710 20090825
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A semiconductor component comprising a semiconductor body, a channel zone in the semiconductor body, a channel control electrode adjacent to the channel zone, and a dielectric layer between the channel zone and the channel control electrode, wherein the dielectric layer has a relative dielectric constant ∈r with a negative temperature coefficient.
公开/授权文献
- US20110049593A1 Semiconductor Component 公开/授权日:2011-03-03
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