发明授权
- 专利标题： Semiconductor device comprising capacitive element
- 专利标题（中）： 包括电容元件的半导体器件
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申请号： US12864091申请日： 2009-01-22
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公开(公告)号： US08810000B2公开(公告)日： 2014-08-19
- 发明人: Ippei Kume , Naoya Inoue , Yoshihiro Hayashi
- 申请人： Ippei Kume , Naoya Inoue , Yoshihiro Hayashi
- 申请人地址： JP Kawasaki-shi, Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi, Kanagawa
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2008-011210 20080122
- 国际申请： PCT/JP2009/050937 WO 20090122
- 国际公布： WO2009/093633 WO 20090730
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A capacitive element formed within a semiconductor device comprises an upper electrode, a capacitive insulating film containing an oxide and/or silicate of a transition metal element, and a lower electrode having a polycrystalline conductive film composed of a material having higher oxidation resistance than the transition metal element and an amorphous or microcrystalline conductive film formed below the polycrystalline conductive film.
公开/授权文献
- US20100327409A1 SEMICONDUCTOR DEVICE COMPRISING CAPACITIVE ELEMENT 公开/授权日：2010-12-30
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