发明授权
US08810973B2 Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance
有权
电流垂直于采用半金属合金的平面磁阻传感器，以提高传感器性能
- 专利标题： Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance
- 专利标题（中）： 电流垂直于采用半金属合金的平面磁阻传感器，以提高传感器性能
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申请号： US12119961申请日： 2008-05-13
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公开(公告)号： US08810973B2公开(公告)日： 2014-08-19
- 发明人: Hardayal Singh Gill
- 申请人： Hardayal Singh Gill
- 申请人地址： NL Amsterdam
- 专利权人： HGST Netherlands B.V.
- 当前专利权人： HGST Netherlands B.V.
- 当前专利权人地址： NL Amsterdam
- 代理机构： Zilka-Kotab, PC
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co2MnX and CoFe, where X is Al, Ge or Si. The Co2MnX can be sandwiched between the layers of CoFe to prevent Mn migration into the spacer/barrier layer. The free layer can also be constructed as a lamination of Co2MnX and CoFe layers, and may also be constructed so that the Co2MnX layer is sandwiched between CoFe layers to prevent Mn migration.
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