发明授权
- 专利标题: Flash memory system and word line interleaving method thereof
- 专利标题(中): 闪存系统及其字线交错方法
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申请号: US13236176申请日: 2011-09-19
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公开(公告)号: US08811080B2公开(公告)日: 2014-08-19
- 发明人: Yongjune Kim , Hong Rak Son , Seonghyeog Choi , Junjin Kong
- 申请人: Yongjune Kim , Hong Rak Son , Seonghyeog Choi , Junjin Kong
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2010-0092586 20100920
- 主分类号: G11C11/06
- IPC分类号: G11C11/06
摘要:
Provided are a flash memory system and a word line interleaving method thereof. The flash memory system includes a memory cell array, and a word line interleaving logic. The memory cell array is connected to a plurality of word lines. The word line (WL) interleaving logic performs an interleaving operation on WL data corresponding to at least two different wordlines and programming data, including the interleaved data, to the memory cell array.
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