发明授权
- 专利标题: Method of processing MIM capacitors to reduce leakage current
- 专利标题(中): MIM电容器的处理方法,以减少泄漏电流
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申请号: US13159842申请日: 2011-06-14
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公开(公告)号: US08815677B2公开(公告)日: 2014-08-26
- 发明人: Hanhong Chen , Wim Deweerd , Xiangxin Rui , Sandra Malhotra , Hiroyuki Ode
- 申请人: Hanhong Chen , Wim Deweerd , Xiangxin Rui , Sandra Malhotra , Hiroyuki Ode
- 申请人地址: US CA San Jose JP Tokyo
- 专利权人: Intermolecular, Inc.,Elpida Memory, Inc.
- 当前专利权人: Intermolecular, Inc.,Elpida Memory, Inc.
- 当前专利权人地址: US CA San Jose JP Tokyo
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242 ; H01L21/20
摘要:
A method for processing dielectric materials and electrodes to decrease leakage current is disclosed. The method includes a post dielectric anneal treatment in an oxidizing atmosphere to reduce the concentration of oxygen vacancies in the dielectric material. The method further includes a post metallization anneal treatment in an oxidizing atmosphere to reduce the concentration of interface states at the electrode/dielectric interface and to further reduce the concentration of oxygen vacancies in the dielectric material.