发明授权
- 专利标题: Laser machining method and method for manufacturing compound semiconductor light-emitting element
- 专利标题(中): 激光加工方法和制造化合物半导体发光元件的方法
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申请号: US13203112申请日: 2010-02-25
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公开(公告)号: US08815705B2公开(公告)日: 2014-08-26
- 发明人: Kazuhiro Kato
- 申请人: Kazuhiro Kato
- 申请人地址: JP Aichi
- 专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人地址: JP Aichi
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2009-049311 20090303
- 国际申请: PCT/JP2010/052954 WO 20100225
- 国际公布: WO2010/101069 WO 20100910
- 主分类号: B23K26/06
- IPC分类号: B23K26/06 ; B23K26/08 ; B23K26/40 ; H01L33/00 ; H01L21/67
摘要:
Provided is a laser machining method in which, when modified regions are formed plural number of times by changing the depth in the thickness direction of a substrate, displacement of the formed modified regions from a planned cutting line is inhibited. Specifically provided is a laser machining method for cutting a substrate (10) into chips. Modified regions are formed at a deep distance (d1) inside the substrate from the entrance surface of a laser beam by first scanning (a) in which the substrate is scanned with the laser beam along a planned cutting line (21a) in the X direction of the substrate and second scanning (b) in which the substrate is scanned with the laser beam along a planned cutting line (21b) in the Y direction. Modified regions are again formed at a shallow distance (d2) (d1>d2) inside the substrate by third scanning (c) in which the substrate is scanned with the laser beam along the planned cutting line (21a) in the X direction and fourth scanning (d) in which the substrate is scanned with the laser beam along the planned cutting line (21b) in the Y direction. The third scanning is performed by scanning from a U end portion at the periphery to the center and scanning from a D end portion at the periphery to the center.
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