发明授权
US08815748B2 Method of forming semiconductor device with multiple level patterning
有权
形成多层次图案化的半导体器件的方法
- 专利标题： Method of forming semiconductor device with multiple level patterning
- 专利标题（中）： 形成多层次图案化的半导体器件的方法
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申请号： US11623036申请日： 2007-01-12
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公开(公告)号： US08815748B2公开(公告)日： 2014-08-26
- 发明人: Thomas Ingolf Wallow , Ryoung-han Kim , Jongwook Kye , Harry Jay Levinson
- 申请人： Thomas Ingolf Wallow , Ryoung-han Kim , Jongwook Kye , Harry Jay Levinson
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Farjami & Farjami LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/027 ; G03F7/40 ; H01L21/311 ; G03F7/00
摘要：
A method for forming a semiconductor device is provided including processing a wafer having a target material, forming a multilevel photoresist structure having a protection layer over the target material, and forming a multilevel recess in the target material with the multilevel photoresist structure.
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