发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13497249申请日： 2011-11-25
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公开(公告)号： US08816326B2公开(公告)日： 2014-08-26
- 发明人: Huaxiang Yin , Jun Luo , Chao Zhao , Honggang Liu , Dapeng Chen
- 申请人： Huaxiang Yin , Jun Luo , Chao Zhao , Honggang Liu , Dapeng Chen
- 申请人地址： CN Beijing
- 专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人地址： CN Beijing
- 代理机构： Martine Penilla Group, LLP
- 优先权： CN201110339415 20111101
- 国际申请： PCT/CN2011/001965 WO 20111125
- 国际公布： WO2013/063726 WO 20130510
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/778 ; H01L29/08
摘要：
A semiconductor device, which comprises: a semiconductor substrate; a channel region on the semiconductor substrate, said channel region including a quantum well structure; a source region and a drain region on the sides of the channel region; a gate structure on the channel region; wherein the materials for the channel region, the source region and the drain region have different energy bands, and a tunneling barrier structure exists between the source region and the channel region.
公开/授权文献
- US20130105763A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2013-05-02
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