发明授权
- 专利标题: Source/drain engineering of devices with high-mobility channels
- 专利标题(中): 具有高移动性通道的设备的源/漏工程
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申请号: US12615996申请日: 2009-11-10
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公开(公告)号: US08816391B2公开(公告)日: 2014-08-26
- 发明人: Chih-Hsin Ko , Clement Hsingjen Wann
- 申请人: Chih-Hsin Ko , Clement Hsingjen Wann
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater and Matsil, L.L.P.
- 主分类号: H01L29/772
- IPC分类号: H01L29/772
摘要:
An integrated circuit structure includes a substrate, and a channel over the substrate. The channel includes a first III-V compound semiconductor material formed of group III and group V elements. A gate structure is over the channel. A source/drain region is adjacent the channel and includes a group-IV region formed of a doped group-IV semiconductor material selected from the group consisting essentially of silicon, germanium, and combinations thereof.
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