发明授权
US08816391B2 Source/drain engineering of devices with high-mobility channels 有权
具有高移动性通道的设备的源/漏工程

Source/drain engineering of devices with high-mobility channels
摘要:
An integrated circuit structure includes a substrate, and a channel over the substrate. The channel includes a first III-V compound semiconductor material formed of group III and group V elements. A gate structure is over the channel. A source/drain region is adjacent the channel and includes a group-IV region formed of a doped group-IV semiconductor material selected from the group consisting essentially of silicon, germanium, and combinations thereof.
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