发明授权
- 专利标题: Integration of lithography apparatus and mask optimization process with multiple patterning process
- 专利标题(中): 光刻设备和掩模优化工艺与多个图案化工艺的集成
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申请号: US13439692申请日: 2012-04-04
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公开(公告)号: US08819601B2公开(公告)日: 2014-08-26
- 发明人: Luoqi Chen , Jun Ye , Hong Chen
- 申请人: Luoqi Chen , Jun Ye , Hong Chen
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. A method of splitting a pattern to be imaged onto a substrate via a lithographic process into a plurality of sub-patterns is disclosed, wherein the method comprises a splitting step being configured to be aware of requirements of a co-optimization between at least one of the sub-patterns and an optical setting of the lithography apparatus used for the lithographic process. Device characteristic optimization techniques, including intelligent pattern selection based on diffraction signature analysis, may be integrated into the multiple patterning process flow.
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