发明授权
- 专利标题: Photoelectrochemical cell and energy system using same
- 专利标题(中): 光电化学电池和能量系统使用相同
-
申请号: US13502322申请日: 2010-11-04
-
公开(公告)号: US08821700B2公开(公告)日: 2014-09-02
- 发明人: Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
- 申请人: Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hato , Noboru Taniguchi , Takahiro Suzuki , Kenichi Tokuhiro
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: Hamre, Schumann, Mueller & Larson, P.C.
- 优先权: JP2009-257437 20091110
- 国际申请: PCT/JP2010/006498 WO 20101104
- 国际公布: WO2011/058723 WO 20110519
- 主分类号: C25B1/04
- IPC分类号: C25B1/04 ; C25B5/00 ; C25B9/06 ; C25B1/00 ; C01B3/04 ; H01M8/06 ; H01M14/00
摘要:
A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121), a first n-type semiconductor layer (122) having a nanotube array structure, and a second n-type semiconductor layer (123); a counter electrode (130) connected to the conductor (121); an electrolyte (140) in contact with the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). Relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (121) is higher than the Fermi level of the first n-type semiconductor layer (122).
公开/授权文献
- US20120276464A1 Photoelectrochemical Cell and Energy System Using Same 公开/授权日:2012-11-01
信息查询