发明授权
- 专利标题： Semiconductor manufacturing apparatus and semiconductor manufacturing method
- 专利标题（中）： 半导体制造装置及半导体制造方法
-
申请号： US13422966申请日： 2012-03-16
-
公开(公告)号： US08822307B2公开(公告)日： 2014-09-02
- 发明人: Naoko Yamaguchi , Kazumasa Tanida , Hideo Numata , Satoshi Hongo , Kenji Takahashi
- 申请人： Naoko Yamaguchi , Kazumasa Tanida , Hideo Numata , Satoshi Hongo , Kenji Takahashi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-141979 20110627
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; B32B37/10 ; B32B38/18 ; H01L21/67
摘要：
According to one embodiment, a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus includes a stage, a substrate supporter, first and second pushers, and a controller. The stage is configured to support outer periphery portions of the first semiconductor substrate from below. The substrate supporter is configured to hold the back of the second semiconductor substrate. The first and second pushers are configured to bring the first and second semiconductor substrates in contact. The controller is configured to form the bonding initiation point between the first and second semiconductor substrates.
公开/授权文献
信息查询
IPC分类:
