发明授权
- 专利标题： Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
- 专利标题（中）： 处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法
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申请号： US11022496申请日： 2004-12-22
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公开(公告)号： US08822315B2公开(公告)日： 2014-09-02
- 发明人: Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
- 申请人： Davis Andrew McClure , Alexander Suvorov , John Adam Edmond , David Beardsley Slater, Jr.
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 主分类号： H01L21/425
- IPC分类号： H01L21/425 ; H01L33/00 ; H01L21/20 ; H01L21/04 ; H01L29/66
摘要：
A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
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