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发明授权
US08822396B2 Solution for removing residue after semiconductor dry process and method of removing the residue using the same 有权
半导体干法除去残留物的方法及使用其除去残渣的方法

Solution for removing residue after semiconductor dry process and method of removing the residue using the same
摘要：
A residue-removing solution for removing residues present on semiconductor substrates after dry etching and/or ashing, the residue-removing solution comprising a Cu surface protective agent including: at least one compound selected from compounds (1), (2) and (3) each having as a basic skeleton a five-membered or six-membered heteratomic structure as defined herein; a compound capable of forming a complex or chelate with Cu (copper); and water. Further, the residue-removing solution has a pH of 4 to 9.
摘要（中）：

一种用于去除在干蚀刻和/或灰化之后存在于半导体衬底上的残留物的残留物去除溶液，所述残渣除去溶液包含Cu表面保护剂，其包括：至少一种选自化合物（1），（2）和（3）的化合物 ）各自具有如本文所定义的五元或六元杂原子结构作为基本骨架; 能够与Cu（铜）形成络合物或螯合物的化合物; 和水。 此外，残渣除去溶液的pH为4〜9。

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