发明授权
- 专利标题： Niobium thin film stress relieving layer for thin-film solar cells
- 专利标题（中）： 薄膜太阳能电池铌薄膜应力消除层
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申请号： US13534519申请日： 2012-06-27
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公开(公告)号： US08822816B2公开(公告)日： 2014-09-02
- 发明人: Qing Cao , Zhengwen Li , Fei Liu , Zhen Zhang
- 申请人： Qing Cao , Zhengwen Li , Fei Liu , Zhen Zhang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Steven Meyers
- 主分类号： H01L31/0264
- IPC分类号： H01L31/0264 ; H01L31/18
摘要：
A method of forming a photovoltaic device includes forming a thermal stress relieving layer on top of a substrate and forming a sacrificial back electrode metal layer on the thermal stress relieving layer. A semiconductor photon absorber layer is formed on the sacrificial back electrode metal layer, and the absorber layer is reacted with substantially an entire thickness of the sacrificial back electrode metal layer, thereby forming a back ohmic contact comprising a metallic compound of the sacrificial back electrode metal layer and the absorber layer, in combination with the thermal stress relieving layer.
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