发明授权
- 专利标题： Phase-change memory device and flexible phase-change memory device insulating nano-dot
- 专利标题（中）： 相变存储器件和柔性相变存储器件绝缘纳米点
-
申请号： US13401449申请日： 2012-02-21
-
公开(公告)号： US08822970B2公开(公告)日： 2014-09-02
- 发明人: Yeon Sik Jung , Keon Jae Lee , Jae Won Jeong , Jae Suk Choi , Geon Tae Hwang , Beom Ho Mun , Byoung Kuk You , Seung Jun Kim
- 申请人： Yeon Sik Jung , Keon Jae Lee , Jae Won Jeong , Jae Suk Choi , Geon Tae Hwang , Beom Ho Mun , Byoung Kuk You , Seung Jun Kim
- 申请人地址： KR Yuseong-Gu, Daejeon
- 专利权人： Korea Advanced Institute of Science and Technology (KAIST)
- 当前专利权人： Korea Advanced Institute of Science and Technology (KAIST)
- 当前专利权人地址： KR Yuseong-Gu, Daejeon
- 代理机构： Hershkovitz & Associates, PLLC
- 代理商 Abraham Hershkovitz
- 优先权： KR10-2011-0015021 20110221; KR10-2011-0088045 20110831
- 主分类号： H01L47/00
- IPC分类号： H01L47/00
摘要：
Provided are a phase-change memory device using insulating nanoparticles, a flexible phase-change memory device and a method for manufacturing the same. The phase-change memory device includes an electrode, and a phase-change layer in which a phase change occurs depending on heat generated from the electrode, wherein insulating nanoparticles formed from a self-assembled block copolymer are provided between the electrode and the phase-change layer undergoing crystallization and amorphization.
公开/授权文献
信息查询
IPC分类:
