Invention Grant
- Patent Title: Phase-change memory device and flexible phase-change memory device insulating nano-dot
- Patent Title (中): 相变存储器件和柔性相变存储器件绝缘纳米点
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Application No.: US13401449Application Date: 2012-02-21
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Publication No.: US08822970B2Publication Date: 2014-09-02
- Inventor: Yeon Sik Jung , Keon Jae Lee , Jae Won Jeong , Jae Suk Choi , Geon Tae Hwang , Beom Ho Mun , Byoung Kuk You , Seung Jun Kim
- Applicant: Yeon Sik Jung , Keon Jae Lee , Jae Won Jeong , Jae Suk Choi , Geon Tae Hwang , Beom Ho Mun , Byoung Kuk You , Seung Jun Kim
- Applicant Address: KR Yuseong-Gu, Daejeon
- Assignee: Korea Advanced Institute of Science and Technology (KAIST)
- Current Assignee: Korea Advanced Institute of Science and Technology (KAIST)
- Current Assignee Address: KR Yuseong-Gu, Daejeon
- Agency: Hershkovitz & Associates, PLLC
- Agent Abraham Hershkovitz
- Priority: KR10-2011-0015021 20110221; KR10-2011-0088045 20110831
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
Provided are a phase-change memory device using insulating nanoparticles, a flexible phase-change memory device and a method for manufacturing the same. The phase-change memory device includes an electrode, and a phase-change layer in which a phase change occurs depending on heat generated from the electrode, wherein insulating nanoparticles formed from a self-assembled block copolymer are provided between the electrode and the phase-change layer undergoing crystallization and amorphization.
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