发明授权
US08822971B2 Semiconductor memory device having three-dimensionally arranged resistive memory cells
有权
具有三维布置的电阻式存储单元的半导体存储器件
- 专利标题： Semiconductor memory device having three-dimensionally arranged resistive memory cells
- 专利标题（中）： 具有三维布置的电阻式存储单元的半导体存储器件
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申请号： US13606789申请日： 2012-09-07
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公开(公告)号： US08822971B2公开(公告)日： 2014-09-02
- 发明人: Jintaek Park , Youngwoo Park , Jungdal Choi
- 申请人： Jintaek Park , Youngwoo Park , Jungdal Choi
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2011-0124204 20111125
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; H01L47/00 ; H01L29/04 ; H01L29/06 ; H01L21/02 ; H01L29/82 ; H01L21/20
摘要：
Semiconductor memory devices are provided. The device may include may include first and second selection lines connected to each other to constitute a selection line group, a plurality of word lines sequentially stacked on each of the first and second selection lines, vertical electrodes arranged in a row between the first and second selection lines, a plurality of bit line plugs arranged in a row at each of both sides of the selection line group, and bit lines crossing the word lines and connecting the bit line plugs with each other.