发明授权
US08824229B2 Semiconductor memory apparatus having a pre-discharging function, semiconductor integrated circuit having the same, and method for driving the same
有权
具有预放电功能的半导体存储装置，具有该放电功能的半导体集成电路及其驱动方法
- 专利标题： Semiconductor memory apparatus having a pre-discharging function, semiconductor integrated circuit having the same, and method for driving the same
- 专利标题（中）： 具有预放电功能的半导体存储装置，具有该放电功能的半导体集成电路及其驱动方法
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申请号： US13219627申请日： 2011-08-27
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公开(公告)号： US08824229B2公开(公告)日： 2014-09-02
- 发明人: Hyun Joo Lee , Hyuck Soo Yoon
- 申请人： Hyun Joo Lee , Hyuck Soo Yoon
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2010-0131287 20101221
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C13/00 ; G11C7/12
摘要：
A semiconductor memory apparatus includes a bit line coupled to a plurality of memory cells, a discharge controller configured to generate a bit line discharge signal to pre-discharge the bit line before the memory cells are activated, and a bit line discharge block coupled to the bit line and configured to discharge the bit line in response to the bit line discharge signal.
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